Senior RF GaN Power Amplifier Design Engineer
Texas Instruments
Design
Dallas, TX, USA
Posted on Dec 3, 2025
Change the world. Love your job.
Texas Instruments (TI) is out front and ready for the next big challenge. Our innovations are at the core of nearly every electronics product in use today. And it doesn't stop there. We're developing breakthrough technology to power the world's future innovations as well. TI is committed to building a better future — from the responsible manufacturing of our semiconductors, to caring for our employees, to giving back inside our communities. Put your talent to work with us.
The Senior RF GaN Power Amplifier Design Engineer role is within Kilby Labs, the central R&D organization of TI. The lab is chartered to develop novel and innovative technologies and strategies for new business opportunities, drive next generation differentiated technologies for existing businesses and recruit top technical talent for TI.
In this role, responsibilities may include:
- Design of RF and mmWave Power Amplifiers using cutting edge GaN process technology
- Analyzing trade-offs involved in designing different Power Amplifier classes and configurations
- Device small signal model extractions and waveform engineering for high efficiency and high backoff designs
- System analysis, device selection, circuit layout and electromagnetic co-simulations
- Defining process technology roadmaps
Why TI?
- Engineer your future. We empower our employees to truly own their career and development. Come collaborate with some of the smartest people in the world to shape the future of electronics.
- We're different by design. Diverse backgrounds and perspectives are what push innovation forward and what make TI stronger. We value each and every voice, and look forward to hearing yours. Meet the people of TI
- Benefits that benefit you. We offer competitive pay and benefits designed to help you and your family live your best life. Your well-being is important to us.
About Texas Instruments
Texas Instruments Incorporated (Nasdaq: TXN) is a global semiconductor company that designs, manufactures and sells analog and embedded processing chips for markets such as industrial, automotive, personal electronics, communications equipment and enterprise systems. At our core, we have a passion to create a better world by making electronics more affordable through semiconductors. This passion is alive today as each generation of innovation builds upon the last to make our technology more reliable, more affordable and lower power, making it possible for semiconductors to go into electronics everywhere. Learn more at TI.com.
Texas Instruments is an equal opportunity employer and supports a diverse, inclusive work environment. All qualified applicants will receive consideration for employment without regard to race, color, religion, creed, disability, genetic information, national origin, gender, gender identity and expression, age, sexual orientation, marital status, veteran status, or any other characteristic protected by federal, state, or local laws.
If you are interested in this position, please apply to this requisition.
TI does not make recruiting or hiring decisions based on citizenship, immigration status or national origin. However, if TI determines that information access or export control restrictions based upon applicable laws and regulations would prohibit you from working in this position without first obtaining an export license, TI expressly reserves the right not to seek such a license for you and either offer you a different position that does not require an export license or decline to move forward with your employment.
Minimum requirements:
- BSEE with 12 years, MSEE with 10 years or PhD with 5 years of Power Amplifier and RFIC design experience
- Taken multiple generations of products from concept to high volume manufacturing
- Successful tape out of multiple devices
- Established in RF simulations using Cadence or ADS, including scripting and coding
- Layout and floor planning of RF circuits and packages using Cadence Virtuoso or ADS layout
- Strong foundation of electromagnetic design using HFSS or ADS Momentum on die, on package and on PCB
- Understanding of harmonic loadpull and use of loadpull data for Power Amplifier design
- Demonstrated strong analytical and problem-solving skills with innovative design and debug
Preferred qualifications:
- Experience with GaN discrete modules and MMIC design
- Experience with high efficiency and high peak to average ratio Power Amplifiers, including Doherty, LMBA, out-phasing and pulsed amplifier designs
- Familiar with RF GaN device physics, including trapping and thermals, and transistor models
- Understanding of PA thermal and packaging constraints
- Experience with PCB prototype development, lab validation and debug
- Design of pre-drivers, bias networks, control circuitry and digital predistortion
- Prior tape out experience of RFIC designs on CMOS, SiGe or III-V
- Ability to work in teams and collaborate effectively with people in different functions and build strong, influential relationships
- Strong time management skills that enable on-time project delivery
- Ability to work effectively in a fast-paced and rapidly changing environment
- Ability to take the initiative and drive for results
- Good listener and excellent verbal and written communication skills
Responsibilities may include:
- Design of RF and mmWave Power Amplifiers using cutting edge GaN process technology
- Analyzing trade-offs involved in designing different Power Amplifier classes and configurations
- Device small signal model extractions and waveform engineering for high efficiency and high backoff designs
- System analysis, device selection, circuit layout and electromagnetic co-simulations
- Defining process technology roadmaps
Minimum requirements:
- BSEE with 12 years, MSEE with 10 years or PhD with 5 years of Power Amplifier and RFIC design experience
- Taken multiple generations of products from concept to high volume manufacturing
- Successful tape out of multiple devices
- Established in RF simulations using Cadence or ADS, including scripting and coding
- Layout and floor planning of RF circuits and packages using Cadence Virtuoso or ADS layout
- Strong foundation of electromagnetic design using HFSS or ADS Momentum on die, on package and on PCB
- Understanding of harmonic loadpull and use of loadpull data for Power Amplifier design
- Demonstrated strong analytical and problem-solving skills with innovative design and debug
Preferred qualifications:
- Experience with GaN discrete modules and MMIC design
- Experience with high efficiency and high peak to average ratio Power Amplifiers, including Doherty, LMBA, out-phasing and pulsed amplifier designs
- Familiar with RF GaN device physics, including trapping and thermals, and transistor models
- Understanding of PA thermal and packaging constraints
- Experience with PCB prototype development, lab validation and debug
- Design of pre-drivers, bias networks, control circuitry and digital predistortion
- Prior tape out experience of RFIC designs on CMOS, SiGe or III-V
- Ability to work in teams and collaborate effectively with people in different functions and build strong, influential relationships
- Strong time management skills that enable on-time project delivery
- Ability to work effectively in a fast-paced and rapidly changing environment
- Ability to take the initiative and drive for results
- Good listener and excellent verbal and written communication skills